Suppressing carrier density in (Bi <sub>x</sub> Sb<sub>1−</sub> <sub>x</sub> )<sub>2</sub>Te<sub>3</sub> films using Cr<sub>2</sub>O<sub>3</sub> interfacial layers
نویسندگان
چکیده
Band structure engineering and interfacial buffer layers have been demonstrated as effective means to tune the Fermi level in topological insulators (TI). In particular, charge compensated compound (BixSb1-x)2Te3 (BST) plays a critical role molecular beam epitaxy growth of magnetic TIs. Here we introduce strategy exploiting epitaxial Cr2O3 layer amorphous capping BST films. These films exhibit carrier density lower than 1012/cm2 over wide range Bi contents higher mobility directly grown on Al2O3 substrate, shedding light importance for TI paving new avenue application
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ژورنال
عنوان ژورنال: Journal of Physics D
سال: 2021
ISSN: ['1361-6463', '0022-3727']
DOI: https://doi.org/10.1088/1361-6463/ac28bc